PART |
Description |
Maker |
CY7C1415BV18-250BZI CY7C1415BV18-167BZI |
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 1M X 36 QDR SRAM, 0.45 ns, PBGA165 36-Mbit QDR™-II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
CY7C1412V18-200BZCES CY7C1414V18-200BZCES CY7C1410 |
36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1511V18-250BZXC CY7C1511V18-250BZI CY7C1511V18 |
72-Mbit QDR II SRAM 4-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 4M X 18 QDR SRAM, 0.5 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 4M X 18 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR II SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1313CV18-167BZC CY7C1315CV18-167BZC CY7C1911CV |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture 18-Mbit QDR??II SRAM 4-Word Burst Architecture 18-Mbit QDR?II SRAM 4-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1511V18-250BZC CY7C1511V18-167BZC |
72-Mbit QDRII SRAM 4-Word Burst Architecture 8M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1141V18 CY7C1145V18 CY7C1156V18 CY7C1143V18 CY |
18-Mbit QDRII SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
|
CY7C1565V18-300BZI |
72-Mbit QDRII SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 36 QDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CYRS1542AV18 |
72-Mbit QDR? II SRAM Two-Word Burst
|
Cypress Semiconductor
|
R1QFA7218AB R1QCA7218AB R1QDA7218AB R1QCA7236AB R1 |
72-Mbit QDR SRAM 2-word Burst 72-Mbit QDR II SRAM 4-word Burst
|
Renesas Electronics Corporation
|